10 April 1997 Low-temperature activation method of poly-Si films using rapid thermal annealing
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Doped polysilicon (poly-Si) films with a low resistivity have been successfully obtained at a low temperature using novel processing technology, which was combined with the rapid thermal annealing (RTA) and ion-doping methods. P- doped poly-Si films with a sheet resistance of 3k(Omega) /$DAL were achieved with a process temperature 220 degrees C lower than that of the conventional process which combined the RTA and ion implantation methods. The uniformity of sheet resistance for P-doped poly-Si films prepared by the novel process was better that for the excimer laser annealing. The threshold voltage, subthreshold swing and field effect mobility for n-channel thin film transistors with a lightly doped drain structure using the novel process were 2.0V, 0.3V/dec., and 70cm2/V s, respectively.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kiichi Hirano, Kiichi Hirano, Naoya Sotani, Naoya Sotani, Isao Hasegawa, Isao Hasegawa, Tomoyuki Nohda, Tomoyuki Nohda, Hisashi Abe, Hisashi Abe, Hiroki Hamada, Hiroki Hamada, } "Low-temperature activation method of poly-Si films using rapid thermal annealing", Proc. SPIE 3014, Active Matrix Liquid Crystal Displays Technology and Applications, (10 April 1997); doi: 10.1117/12.270285; https://doi.org/10.1117/12.270285

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