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10 April 1997 Low-temperature activation method of poly-Si films using rapid thermal annealing
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Doped polysilicon (poly-Si) films with a low resistivity have been successfully obtained at a low temperature using novel processing technology, which was combined with the rapid thermal annealing (RTA) and ion-doping methods. P- doped poly-Si films with a sheet resistance of 3k(Omega) /$DAL were achieved with a process temperature 220 degrees C lower than that of the conventional process which combined the RTA and ion implantation methods. The uniformity of sheet resistance for P-doped poly-Si films prepared by the novel process was better that for the excimer laser annealing. The threshold voltage, subthreshold swing and field effect mobility for n-channel thin film transistors with a lightly doped drain structure using the novel process were 2.0V, 0.3V/dec., and 70cm2/V s, respectively.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kiichi Hirano, Naoya Sotani, Isao Hasegawa, Tomoyuki Nohda, Hisashi Abe, and Hiroki Hamada "Low-temperature activation method of poly-Si films using rapid thermal annealing", Proc. SPIE 3014, Active Matrix Liquid Crystal Displays Technology and Applications, (10 April 1997);

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