Low-temperature poly-Si TFT mass production system: CMD-450 poly

Kazumasa Ito; J. Togawa; T. Yonezaki; M. Hashimoto; Michio Ishikawa; Y. Ota

doi:10.1117/12.270296

10 April 1997 Low-temperature poly-Si TFT mass production system: CMD-450 poly

Kazumasa Ito, J. Togawa, T. Yonezaki, M. Hashimoto, Michio Ishikawa, Y. Ota

Proceedings Volume 3014, Active Matrix Liquid Crystal Displays Technology and Applications; (1997) https://doi.org/10.1117/12.270296
Event: Electronic Imaging '97, 1997, San Jose, CA, United States

Abstract

Low temperature poly-Si TFT mass production plan has been announced recently. However, techniques for depositing poly- Si film and gate SiO₂ film, which provide the possibilities of mass production including that of large- sized substrate and film characteristics to obtain satisfactory TFT characteristics simultaneously, have not yet been established. ULVAC has developed techniques that can be applied to mass production of poly-Si film and gate SiO₂ film and has completed a single-substrate PECVD system called CMD-450 poly based on these techniques. Excellent repeatability of film characteristics and film thickness uniformity. The low-hydrogen concentration PECVD a-Si and TEOS-SiO₂ film mentioned below were obtained by using this system.

Citation Download Citation

Kazumasa Ito, J. Togawa, T. Yonezaki, M. Hashimoto, Michio Ishikawa, and Y. Ota "Low-temperature poly-Si TFT mass production system: CMD-450 poly", Proc. SPIE 3014, Active Matrix Liquid Crystal Displays Technology and Applications, (10 April 1997); https://doi.org/10.1117/12.270296

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