10 April 1997 Low-temperature poly-Si TFT mass production system: CMD-450 poly
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Abstract
Low temperature poly-Si TFT mass production plan has been announced recently. However, techniques for depositing poly- Si film and gate SiO2 film, which provide the possibilities of mass production including that of large- sized substrate and film characteristics to obtain satisfactory TFT characteristics simultaneously, have not yet been established. ULVAC has developed techniques that can be applied to mass production of poly-Si film and gate SiO2 film and has completed a single-substrate PECVD system called CMD-450 poly based on these techniques. Excellent repeatability of film characteristics and film thickness uniformity. The low-hydrogen concentration PECVD a-Si and TEOS-SiO2 film mentioned below were obtained by using this system.
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Kazumasa Ito, Kazumasa Ito, J. Togawa, J. Togawa, T. Yonezaki, T. Yonezaki, M. Hashimoto, M. Hashimoto, Michio Ishikawa, Michio Ishikawa, Y. Ota, Y. Ota, "Low-temperature poly-Si TFT mass production system: CMD-450 poly", Proc. SPIE 3014, Active Matrix Liquid Crystal Displays Technology and Applications, (10 April 1997); doi: 10.1117/12.270296; https://doi.org/10.1117/12.270296
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