25 April 1997 Optimization of noise and responsivity in CMOS active pixel sensors for detection of ultralow-light levels
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Proceedings Volume 3019, Solid State Sensor Arrays: Development and Applications; (1997); doi: 10.1117/12.275185
Event: Electronic Imaging '97, 1997, San Jose, CA, United States
Abstract
In this paper, we present results of the investigation of the design and operation of CMOS active pixel sensors for detection of ultra-low light levels. We present a detailed noise model of APS pixel and signal chain. Utilizing the noise model, we have developed APS pixel designs that can achieve ultra-low noise and high responsivity. We present results from two test chips, that indicate (1) that less than 5 electrons of read noise is possible with CMOS APS by reducing the size of the pixel transistors, and (2) that high responsivity can be achieved when the fill-factor of the photodiode is reduced.
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Orly Yadid-Pecht, Karmak Mansoorian, Eric R. Fossum, Bedabrata Pain, "Optimization of noise and responsivity in CMOS active pixel sensors for detection of ultralow-light levels", Proc. SPIE 3019, Solid State Sensor Arrays: Development and Applications, (25 April 1997); doi: 10.1117/12.275185; https://doi.org/10.1117/12.275185
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