Semiconductor lasers have been the necessities of information infrastructure such as optical fiber communication and information storage. During the recent ten years, great progress has been made in China in the construction of her information infrastructure. As a basic component, semiconductor laser has also attracted much attention in academic research as well as development for industry. In China, there are several bases working on semiconductor lasers, such as State Key Laboratory on integrated optoelectronics, Institute of Semiconductors of Chinese Academy of Sciences, and Wuhan Telecommunication Devices Co., Ltd (WTD). In the State Key Laboratory on Integrated Optoelectronics, 1.3 micrometer and 1.55 micrometer InGaAsP/InP gain-coupled DFB, photonic integrated circuit (PIC), vertical cavity surface emitting lasers are being studied. Commercial class 670 nm visible lasers, 808 nm high power lasers for pumping sources, 1.3 micrometer and 1.55 micrometer InGaAsP/InP strained multiple quantum well (MQW) Fabry-Perot (FP) lasers for communications and 1.3 micrometer and 1.55 micrometer InGaAsP/InP DFB lasers have been developed in Institute of Semiconductors and WTD, respectively. Here, research and development activities on commercial class 670 nm visible laser diodes, 808 nm high power pumping lasers, 1.55 micrometer InGaAsP/InP gain- coupled DFB laser with an improved injection-carrier induced grating, high performance 1.3 micrometer and 1.55 micrometer InGaAsP/InP FP and DFB lasers for communication will be concentrated.