Very-high-speed low-driving-voltage MQW modulator modules

Koichi Wakita

doi:10.1117/12.271464

10 April 1997 Very-high-speed low-driving-voltage MQW modulator modules

Koichi Wakita

Author Affiliations +

Proceedings Volume 3038, High-Speed Semiconductor Lasers for Communication; (1997) https://doi.org/10.1117/12.271464
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Very-low-driving-voltage (less than 1 Vpp) electroabsorption modulators operating at 40-Gbit/s NRZ large-signal modulation have been fabricated using strained InGaAlAs/InAlAs multiple quantum wells (MQWs). The optimum structure has been discussed with strain magnitude in the wells as a parameter, based on a figure of merit that is defined as the ratio of 3 dB bandwidth to the driving voltage. Blue chirp operation for low insertion loss with prebias has been demonstrated in addition to polarization insensitivity.

Citation Download Citation

Koichi Wakita, Koichi Wakita, } "Very-high-speed low-driving-voltage MQW modulator modules", Proc. SPIE 3038, High-Speed Semiconductor Lasers for Communication, (10 April 1997); doi: 10.1117/12.271464; https://doi.org/10.1117/12.271464

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