You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
10 April 1997Very-high-speed low-driving-voltage MQW modulator modules
Very-low-driving-voltage (less than 1 Vpp) electroabsorption modulators operating at 40-Gbit/s NRZ large-signal modulation have been fabricated using strained InGaAlAs/InAlAs multiple quantum wells (MQWs). The optimum structure has been discussed with strain magnitude in the wells as a parameter, based on a figure of merit that is defined as the ratio of 3 dB bandwidth to the driving voltage. Blue chirp operation for low insertion loss with prebias has been demonstrated in addition to polarization insensitivity.