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19 June 1997 Modified low-temperture direct bonding method for vacuum microelectronics application
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Abstract
This paper presents the process and experimental results for the improved silicon-to-glass bonding using silicon direct bonding (SDB) followed by anodic bonding. The initial bonding between glass and silicon was caused by the hydrophilic surfaces of silicon-glass ensemble using SDB method. Then the initially bonded specimen had to be strongly bonded by anodic bonding process. The effects of the bonding process parameters on the interface energy were investigated as functions of the bonding temperature and voltage. We found that the specimen which was bonded using SDB process followed by anodic bonding process had higher interface energy than one using anodic bonding process only. The main factor contributing to the higher interface energy in the glass-to-silicon assemble bonded by SDB followed by anodic bonding was investigated by secondary ion mass spectroscopy analysis.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Byeong-Kwon Ju, Duck-Jung Lee, Woo-Beom Choi, Yun-Hi Lee, Jin Jang, Kwang-Bae Lee, and Myung-Hwan Oh "Modified low-temperture direct bonding method for vacuum microelectronics application", Proc. SPIE 3046, Smart Structures and Materials 1997: Smart Electronics and MEMS, (19 June 1997); https://doi.org/10.1117/12.276625
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