7 July 1997 Fabrication of high-performance MSM photodetectors on SOI with nanometer-scale scattering buried backside reflectors
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Abstract
We present the fabrication and performance of a metal- semiconductor -metal (MSM) photodetector with high efficiency and high speed. The MSM photodetector is fabricated on a SOI substrate with a 170-nm-thick Si active layer. A scattering backside reflector, consisting of inverted pyramids with 193- nm-long sides and 54.7 degree slopes, is buried underneath the active layer. This scattering buried backside reflector (SBBR) causes the trapping of light inside the active layer, resulting in an MSM photodetector with a response time of 5.4 ps and responsivity comparable with those on bulk Si at both the visible and infrared.
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Erli Chen, Stephen Y. Chou, "Fabrication of high-performance MSM photodetectors on SOI with nanometer-scale scattering buried backside reflectors", Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); doi: 10.1117/12.275795; https://doi.org/10.1117/12.275795
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