Paper
7 July 1997 Highly accurate alignment technology for electron-beam lithography in mix-and-match with optical stepper
Yoshinori Nakayama, Yasuko Gotoh, Norio Saitou, Hajime Hayakawa, Minoru Sasaki
Author Affiliations +
Abstract
A novel alignment technology for electron-beam lithography is proposed for hybrid use with i-line steppers. This alignment technology was developed based on the evaluation of alignment characteristics and on the investigation of alignment errors in electron-beam lithography systems used in the mix-and-match process. In this alignment method, global alignment using representative chips on a wafer effectively achieves accurate overlay and high throughput. Overlay measurements showed that the deviation in the alignment error is smaller than 70 nm within 3 sigma.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshinori Nakayama, Yasuko Gotoh, Norio Saitou, Hajime Hayakawa, and Minoru Sasaki "Highly accurate alignment technology for electron-beam lithography in mix-and-match with optical stepper", Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); https://doi.org/10.1117/12.275784
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KEYWORDS
Optical alignment

Lithography

Distortion

Semiconducting wafers

Overlay metrology

Optics manufacturing

Manufacturing

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