Positive-tone conducting electron-beam resists

Maggie A. Z. Hupcey; Christopher Kemper Ober

doi:10.1117/12.275808

7 July 1997 Positive-tone conducting electron-beam resists

Maggie A. Z. Hupcey, Christopher Kemper Ober

Proceedings Volume 3048, Emerging Lithographic Technologies; (1997) https://doi.org/10.1117/12.275808
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

Many lithographic methods are being examined for high throughput, sub- 0.15 micrometer lithography including e-beam lithography. With current resist materials, high throughput and resolution is limited by charging of the insulating resist which leads to image distortion of the pattern. We have developed a new family of resists based upon graft copolymers of PMMA and poly(hexylthiophene) that offer fast (less than 30 (mu) C/cm²) positive-tone imaging with the ability to provide for charge dissipation.

Citation Download Citation

Maggie A. Z. Hupcey and Christopher Kemper Ober "Positive-tone conducting electron-beam resists", Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); https://doi.org/10.1117/12.275808

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