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7 July 1997 SNR200 chemically amplified resist optimization
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Abstract
A resist process using Shipley SNR200R chemically amplified (CA) resist has been characterized and optimized for the manufacture of 1x masks for x-ray lithography. This paper describes the processes and the experimental designs used to optimize the post-apply-bake (PAB) and post-expose-bake (PEB) that affect resist sensitivity and process latitude of SNR200 resist. The baking parameters were optimized for an electron- beam sensitivity of 20 (mu) C/cm2 at 75 kV using designed experiments, analyzed by SAS software, JMPR. This paper also shows the capability of the resist process to yield a minimum resolution less than 0.125 micrometer, a critical dimension (CD) uniformity less than 20 nm 3 sigma across a 25 mm by 25 mm membrane, and repeatability from membrane to membrane less than 25 nm 3 sigma. The dose compensation software required for electron-beam lithography to correct for electron scatter from the substrate, etc., was developed by IBM for their shaped-beam lithography systems and, with correct parameters, CD linearity plots show accurate replication to data designs ranging from 0.175 micrometer to 0.4 micrometer. The process latitude and robustness demonstrated shows that SNR200 resist is compatible with a manufacturing environment required for the fabrication of x- ray masks.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Janet M. Rocque, Denise M. Puisto, Douglas J. Resnick, Kevin D. Cummings, William Chu, and Philip A. Seese "SNR200 chemically amplified resist optimization", Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); https://doi.org/10.1117/12.275799
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