7 July 1997 X-ray mask replication using a Suss stepper at CXrL
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Abstract
Crucial to any viable lithographic mask technology is the requirement that a given mask pattern be usable for the hundreds of thousands of exposures in a production environment. In a conventional approach this would be accomplished by making robust masks. A better strategy to ensure the longevity of the pattern itself, is realized by producing many defect-free copies of master masks. This approach is especially important in the case of x-ray masks, although the optical masks also have a limited usable lifetime. X-ray mask generation is accomplished today via e- beam lithography, which as a replication method has several inherent disadvantages, including low speed and high cost. X- ray replication is the best solution. In this paper, we describe the development of a mask replication method realized on a Suss x-ray stepper. The approach is based on supporting parent mask and the daughter blank in fully kinematic fixtures during replication, ensuring a minimum of distortion, excellent gap control and optimized exposure conditions. Minor modifications of the mask mounting fixtures, the replication setup, and details of processing are presented. Preliminary results of mask replication are also shown.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Quinn J. Leonard, Quinn J. Leonard, John P. Wallace, John P. Wallace, Olga Vladimirsky, Olga Vladimirsky, Yuli Vladimirsky, Yuli Vladimirsky, Klaus Simon, Klaus Simon, Franco Cerrina, Franco Cerrina, "X-ray mask replication using a Suss stepper at CXrL", Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); doi: 10.1117/12.275790; https://doi.org/10.1117/12.275790
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