7 July 1997 Acid amplification of chemically amplified resists for 193-nm lithography
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Proceedings Volume 3049, Advances in Resist Technology and Processing XIV; (1997); doi: 10.1117/12.275847
Event: Microlithography '97, 1997, Santa Clara, CA, United States
Abstract
We analyzed acid amplified positive resists designed for 193 nm lithography. The acid amplified resists are composed of an acid generator, a partially protected alicyclic polymer and an acid amplifier which is designed to produce acid during post- exposure baking. We found that acid amplified resists double the sensitivity. We also found that introducing acid amplified resists improves surface effect and adhesion. The acid amplified resist resolve 0.16 micrometer L&S, whereas conventional chemically amplified resists only resolve 0.2 micrometer L&S.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takeshi Ohfuji, Makoto Takahashi, Koichi Kuhara, Tohru Ogawa, Hiroshi Ohtsuka, Masaru Sasago, Kunihiro Ichimura, "Acid amplification of chemically amplified resists for 193-nm lithography", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275847; https://doi.org/10.1117/12.275847
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KEYWORDS
Amplifiers

Chemically amplified resists

Lithography

Polymers

Absorbance

193nm lithography

Lithographic illumination

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