We have developed a chemically amplified photoresist for use in ArF lithography based on alicyclic polymer. 3- Bicyclo(2,2,1)hept-2-yl-3-(2-methyl allyoxy)-propionic acid tert-butyl ester (BHPE) was prepared as a new kind of protected acid-labile monomer. Terpolymer, poly(BHPE-NBO-MAL), was prepared with BHPE, 5-norbornen-2-ol (NBO), and maleic anhydride (MAL) monomers by radical polymerization. Photoresist of poly(BHPE-NBO-MAL) displayed good adhesion, dry-etch resistance, and development. As a result, we obtained 0.16 micrometer line-and-space positive patterns with 2.38 wt% TMAH aqueous solution using an ArF exposure system.