7 July 1997 Comparative study of positive chemically amplified photoresist performance for x-ray and DUV lithography
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Abstract
In this paper, experimental formulations of ESCAP photoresist with two different photoacid generators (PAG) are compared for x-ray and DUV (248 nm) exposures. Sensitivities, chemical contrasts and development selectivities have been derived from dissolution rate and FTIR data collected under similar process conditions. X-ray exposed experimental resists are also compared to a commercial UVIIHS photoresist. Linewidth performances of the x-ray exposed resists are presented at 175 nm ground rules. Relationships between the photoresists contrasts (both chemical and development), dissolution rates of fully exposed and unexposed resists, aerial image properties and linewidth exposure budget are discussed. Effect of a dissolution inhibitor on x-ray linewidth performance is shown.
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Azalia A. Krasnoperova, Azalia A. Krasnoperova, Hiroshi Ito, Hiroshi Ito, Gregory Breyta, Gregory Breyta, Debra Fenzel-Alexander, Debra Fenzel-Alexander, } "Comparative study of positive chemically amplified photoresist performance for x-ray and DUV lithography", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275871; https://doi.org/10.1117/12.275871
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