7 July 1997 Determination of resist and development parameters for i-line photoresist AZ 7800 by experiment and simulation
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Abstract
We present a method to improve the simulation accuracy by adjustment of the resist and process parameters. The parameters are fitted by comparison of simulated and experimental determined lithographic functions: swing curves, development rate function and focus latitude curves for different doses within an accuracy of plus or minus 30 nm. Therefore we can use the simulation to support the process optimization.
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Lothar Bauch, Ulrich A. Jagdhold, Walter Spiess, "Determination of resist and development parameters for i-line photoresist AZ 7800 by experiment and simulation", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275892; https://doi.org/10.1117/12.275892
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