7 July 1997 Effect of base additive on process latitude in chemically amplified electron-beam resists
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The stability during the storage between EB exposure and post- exposure bake (PEB) of the chemically amplified resist containing diphenylamine (DPA) was discussed. The large dimension change of 0.15 micrometer L/S pattern with 14 (mu) C/cm2 EB dose was observed within 1 hour in a vacuum due to the deprotection reaction. The stability of the resist properties in an atmosphere before PEB (PED instability) depends on the time during which the exposed resist is stored in a vacuum. Keeping the exposed resist in a vacuum for more than about 20 minutes makes PED instability good. This seems to be caused by a dark reaction for about 20 minutes, which occurs in addition to the deprotection reaction and realizes equilibrium between DPA and acid generated by EB exposure. This mechanism by which DPA acts as a superior stabilizing base additive is supported by the time dependence of surface resistance for the resist in an atmosphere.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Satoshi Saito, Satoshi Saito, Naoko Kihara, Naoko Kihara, Takuya Naito, Takuya Naito, Makoto Nakase, Makoto Nakase, Tetsuro Nakasugi, Tetsuro Nakasugi, Yoshimitsu Kato, Yoshimitsu Kato, } "Effect of base additive on process latitude in chemically amplified electron-beam resists", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275868; https://doi.org/10.1117/12.275868

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