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7 July 1997 Fluorescence detection of photoacid in chemically amplified resists
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Abstract
An analytical technique for measuring photoacid in chemically amplified resist using fluorescence spectroscopy has been developed. The range of detection from picograms to micrograms, offers a versatile alternative to standard practices of acid detection such as photometric bleaching by UV-Vis absorption spectroscopy. Quantum yields of photoacid generation were measured for films of poly 4-t- butoxycarbonyloxystyrene, PBOCST, and poly hydroxystyrene, PHS, containing the i-line photosensitizer anthracene. Four distinct photoacid generators, PAGs, were compared, two triphenyl sulfonium salts with triflic acid and trifluoromethyl phenyl sulfonic acid, and two sulfonate esters of an n-hydroxyimide that generate triflic acid and trifluoromethyl phenyl sulfonic acid. The ionic PAGs have a quantum yield of approximately 6 - 8 multiplied by 10-4 and the covalent PAGs range from 2 multiplied by 10-5 to 6 multiplied by 10-4. The inadequate amount of acid produced at a nominal dose of 100 mJ/cm2 requires a catalytic chain length that is impractical in standard amplified systems.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrew R. Eckert and Wayne M. Moreau "Fluorescence detection of photoacid in chemically amplified resists", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275890
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