High-contrast chemically amplified resist for SR lithography

Teruhiko Kumada; Hiroshi Adachi; Hiroshi Watanabe; Hiroaki Sumitani

doi:10.1117/12.275846

7 July 1997 High-contrast chemically amplified resist for SR lithography

Teruhiko Kumada, Hiroshi Adachi, Hiroshi Watanabe, Hiroaki Sumitani

Proceedings Volume 3049, Advances in Resist Technology and Processing XIV; (1997) https://doi.org/10.1117/12.275846
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

The resists for SR lithography require higher contrast (gamma value) for the current weak ability of the masks to cutoff x- ray beam as well as the high sensitivity for improving of throughput. Unfortunately, gamma values have not been estimated invariably because the method to obtain a quantitative gamma value has not been established. Little attention has been paid to the acquirement of the accurate gamma value of the resist. We have formed a fitting equation to the sensitivity curve to quantitatively investigate the resist contrast. We have evaluated tert-Butoxycarbonyl (tBOC) based chemically amplified resist. This resist showed good resolution but low gamma value. This result is due to the incomplete tBOC elimination during exposure and post exposure baking (PEB) process. We have simulated the amount of chemical reaction in the resist and the sensitivity curves. From these results, it is concluded that the most effective way to achieve a high gamma value is not only to increase the reactivity of decomposition reaction with an acid catalyst but also to augment the initial substitution ratio.

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Teruhiko Kumada, Hiroshi Adachi, Hiroshi Watanabe, and Hiroaki Sumitani "High-contrast chemically amplified resist for SR lithography", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275846

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KEYWORDS

X-rays

Lithography

Chemically amplified resists

Photomasks

Chemical reactions

Electron beams

Signal attenuation

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