7 July 1997 High-contrast chemically amplified resist for SR lithography
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The resists for SR lithography require higher contrast (gamma value) for the current weak ability of the masks to cutoff x- ray beam as well as the high sensitivity for improving of throughput. Unfortunately, gamma values have not been estimated invariably because the method to obtain a quantitative gamma value has not been established. Little attention has been paid to the acquirement of the accurate gamma value of the resist. We have formed a fitting equation to the sensitivity curve to quantitatively investigate the resist contrast. We have evaluated tert-Butoxycarbonyl (tBOC) based chemically amplified resist. This resist showed good resolution but low gamma value. This result is due to the incomplete tBOC elimination during exposure and post exposure baking (PEB) process. We have simulated the amount of chemical reaction in the resist and the sensitivity curves. From these results, it is concluded that the most effective way to achieve a high gamma value is not only to increase the reactivity of decomposition reaction with an acid catalyst but also to augment the initial substitution ratio.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Teruhiko Kumada, Teruhiko Kumada, Hiroshi Adachi, Hiroshi Adachi, Hiroshi Watanabe, Hiroshi Watanabe, Hiroaki Sumitani, Hiroaki Sumitani, } "High-contrast chemically amplified resist for SR lithography", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275846; https://doi.org/10.1117/12.275846


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