High-sensitivity silylation process for 193-nm lithography

Shigeyasu Mori; Koichi Kuhara; Takeshi Ohfuji; Masaru Sasago

doi:10.1117/12.275814

7 July 1997 High-sensitivity silylation process for 193-nm lithography

Shigeyasu Mori, Koichi Kuhara, Takeshi Ohfuji, Masaru Sasago

Proceedings Volume 3049, Advances in Resist Technology and Processing XIV; (1997) https://doi.org/10.1117/12.275814
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

A high-sensitivity silylation process for 193-nm lithography has been developed by applying chemically amplified resist. A positive high-sensitivity silylation process has been achieved using the chemically amplified negative tone resist for deep UV. Excellent sensitivity (less than 5.0 mJ/cm²) was obtained with on this process. Comparing this process with the polyvinylphenol (PVP) process having low sensitivity (100 mJ/cm²), no disadvantage can be observed. The pattern profile using chemically amplified resist is equivalent to that using PVP, its resolution is 0.14 (mu) L/S. The new process has a depth of focus of 0.6 micrometer for 0.14 (mu) L/S and good linearity to 0.14 (mu) L/S using a conventional binary mask. Further, a resolution of 0.10 (mu) L/S was obtained with a sensitivity of 5.3 mJ/cm² using a Levenson-type mask.

Citation Download Citation

Shigeyasu Mori, Koichi Kuhara, Takeshi Ohfuji, and Masaru Sasago "High-sensitivity silylation process for 193-nm lithography", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275814

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