7 July 1997 High-sensitivity silylation process for 193-nm lithography
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Abstract
A high-sensitivity silylation process for 193-nm lithography has been developed by applying chemically amplified resist. A positive high-sensitivity silylation process has been achieved using the chemically amplified negative tone resist for deep UV. Excellent sensitivity (less than 5.0 mJ/cm2) was obtained with on this process. Comparing this process with the polyvinylphenol (PVP) process having low sensitivity (100 mJ/cm2), no disadvantage can be observed. The pattern profile using chemically amplified resist is equivalent to that using PVP, its resolution is 0.14 (mu) L/S. The new process has a depth of focus of 0.6 micrometer for 0.14 (mu) L/S and good linearity to 0.14 (mu) L/S using a conventional binary mask. Further, a resolution of 0.10 (mu) L/S was obtained with a sensitivity of 5.3 mJ/cm2 using a Levenson-type mask.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shigeyasu Mori, Koichi Kuhara, Takeshi Ohfuji, Masaru Sasago, "High-sensitivity silylation process for 193-nm lithography", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275814; https://doi.org/10.1117/12.275814
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