7 July 1997 Laser removal of deep submicron-patterned photoresist after RIE of polysilicon, contacts, and vias
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Abstract
Removal of tough compounds, which are formed during reactive ion etch (RIE) of polysilicon, contacts and vias, is one of the challenges in deep submicron patterned photoresist stripping. A novel UV-excimer laser photoresist stripping method proposed here allows the removal of these hard and mainly inorganic species, usually situated on sidewalls, in one dry step.
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Menachem Genut, Menachem Genut, Ofer Tehar-Zahav, Ofer Tehar-Zahav, Eli Iskevitch, Eli Iskevitch, Boris Livshits, Boris Livshits, } "Laser removal of deep submicron-patterned photoresist after RIE of polysilicon, contacts, and vias", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275872; https://doi.org/10.1117/12.275872
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