7 July 1997 New ESCAP-type resist with enhanced etch resistance and its application to future DRAM and logic devices
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Abstract
This new photoresist system extends the capability of the ESCAP platform previously discussed. (1) This resist material features a modified ESCAP type 4-hydroxystyrene-t-butyl acrylate polymer system which is capable of annealing due to the increased stability of the t-butyl ester blocking group. The resist based on this polymer system exhibits excellent delay stability and enhanced etch resistance versus previous DUV resists, APEX and UV2HS. Improved stabilization of chemically amplified photoresist images can be achieved through reduction of film volume by film densification. When the host polymer provides good thermal stability the soft bake conditions can be above or near the Tg (glass transition) temperature of the polymer. The concept of annealing (film densification) can significantly improve the environmental stability of the photoresist system. Improvements in the photoacid generator, processing conditions and overall formulation coupled with high NA (numerical aperture) exposure systems, affords linear lithography down to 0.15 micrometer for isolated lines with excellent post exposure delay stability. In this paper, we discuss the UV4 and UV5 photoresist systems based on the ESCAP materials platform. The resist based on this polymer system exhibits excellent delay stability and enhanced etch resistance versus APEX-E and UV2HS. Due to lower acrylate content, the Rmax for this system can be tuned for feature-type optimization. We demonstrate sub-0.25 micrometer process window for isolated lines using these resists on a conventional exposure tool with chrome on glass masks. We also discuss current use for various device levels including gate structures for advanced microprocessor designs. Additional data will be provided on advanced DRAM applications for 0.25 micrometer and sub-0.25 micrometer programs.
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Will Conley, Will Conley, William R. Brunsvold, William R. Brunsvold, Fred Buehrer, Fred Buehrer, Ronald DellaGuardia, Ronald DellaGuardia, David Dobuzinsky, David Dobuzinsky, Timothy R. Farrell, Timothy R. Farrell, Hok Ho, Hok Ho, Ahmad D. Katnani, Ahmad D. Katnani, Robin Keller, Robin Keller, James T. Marsh, James T. Marsh, Paul Muller, Paul Muller, Ronald Nunes, Ronald Nunes, Hung Y. Ng, Hung Y. Ng, James M. Oberschmidt, James M. Oberschmidt, Michael Pike, Michael Pike, Deborah Ryan, Deborah Ryan, Tina Cotler-Wagner, Tina Cotler-Wagner, Ron Schulz, Ron Schulz, Hiroshi Ito, Hiroshi Ito, Donald C. Hofer, Donald C. Hofer, Gregory Breyta, Gregory Breyta, Debra Fenzel-Alexander, Debra Fenzel-Alexander, Gregory M. Wallraff, Gregory M. Wallraff, Juliann Opitz, Juliann Opitz, James W. Thackeray, James W. Thackeray, George G. Barclay, George G. Barclay, James F. Cameron, James F. Cameron, Tracy K. Lindsay, Tracy K. Lindsay, Michael Francis Cronin, Michael Francis Cronin, Matthew L. Moynihan, Matthew L. Moynihan, Sassan Nour, Sassan Nour, Jacque H. Georger, Jacque H. Georger, Mike Mori, Mike Mori, Peter Hagerty, Peter Hagerty, Roger F. Sinta, Roger F. Sinta, Thomas M. Zydowsky, Thomas M. Zydowsky, } "New ESCAP-type resist with enhanced etch resistance and its application to future DRAM and logic devices", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275830; https://doi.org/10.1117/12.275830
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