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7 July 1997 Novel functional nortricyclene polymers and copolymers for 248- and 193-nm chemically amplified resists
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Abstract
We have designed and synthesized a series of novel non-acrylic nortricyclene polymer and copolymers containing various structural units for use in both 193 and 248 nm lithography. These polymers and copolymers are prepared using a free- radical cyclopolymerization process that is very versatile and allows use of a great variety of comonomers. The resulting materials exhibit outstanding dry-etch resistance, good adhesion to silicon, good transparency at 193 nm and, unlike many poly(norbornenes), they are not contaminated by metal catalysts. In preliminary 193 nm testing a resist formulated with a suitable photoacid generator afforded alkali-developed positive-tone images with sub-0.15 micrometer L/S resolution. Although a large array of copolymers are possible due to the ease with which the free-radical copolymerization reaction proceeds, copolymers based exclusively on functionalized norbornadiene and maleic anhydride-derived components have shown great promise. In particular, it is possible to tune their properties through simple variations in structure and composition.
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Qingshang Jason Niu, Jean M. J. Frechet, Uzodinma Okoroanyanwu, Jeff D. Byers, and C. Grant Willson "Novel functional nortricyclene polymers and copolymers for 248- and 193-nm chemically amplified resists", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275888
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