7 July 1997 Novel single-layer chemically amplified resist for 193-nm lithography
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Abstract
A new class of photoresist matrix polymer based on alicyclic cyclopolymer was developed for use in ArF single-layer lithography. A novel polymer was synthesized by terpolymerization reaction between tert-butyl methacrylate and alicyclic-maleic anhydride alternating copolymer, which has a hydroxy substituent on the alicyclic group. The polymer showed good solubility in a 2.38 wt% TMAH aqueous solution, high thermal stability up to 180 degrees Celsius, and a good dry- etch resistance against CF4 gas (1.14 times the etching rate of novolak resist). Using an ArF excimer laser exposure system, 0.14 micrometer line and space patterns have been resolved.
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Sang-Jun Choi, Sang-Jun Choi, Yool Kang, Yool Kang, Dong-Won Jung, Dong-Won Jung, Chun-Geun Park, Chun-Geun Park, Joo-Tae Moon, Joo-Tae Moon, } "Novel single-layer chemically amplified resist for 193-nm lithography", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275878; https://doi.org/10.1117/12.275878
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