7 July 1997 Process techniques for improving post-exposure delay stability in chemically amplified resists
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Proceedings Volume 3049, Advances in Resist Technology and Processing XIV; (1997); doi: 10.1117/12.275815
Event: Microlithography '97, 1997, Santa Clara, CA, United States
Abstract
The post-exposure delay (PED) stability of several chemically amplified DUV resists in unfiltered environments is shown to be strongly dependent on the standing wave intensity. The use of a bottom antireflective layer diminishes the rate of CD change for UVIIHSTM, UVIIITM, APEX-E and UV5TM resists by a factor of three or greater. Increasing the post exposure bake to diffuse outstanding waves results in a three to six fold improvement with UVIIHS, UVIII, UV5 and UV6TM. These resists show the greatest stability when soft baked at high temperatures to reduce the diffusion rate of airborne contaminants, and post-exposure baked at high temperatures to diffuse out the standing wave pattern.
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Sassan Nour, Edward K. Pavelchek, Tracy K. Lindsay, Matthew L. Moynihan, Lori Gambin, "Process techniques for improving post-exposure delay stability in chemically amplified resists", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275815; https://doi.org/10.1117/12.275815
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KEYWORDS
Silicon

Chemically amplified resists

Reflectivity

Diffusion

Antireflective coatings

Semiconducting wafers

Contamination

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