7 July 1997 Role of photoacid structure on the performance of 193-nm resists
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Abstract
The impact of photoacid generator (PAG) structure has been largely ignored for 193 nm single layer resists. Most published work to date has involved the use of triflic or metallic (antimonate or arsenate) photoacids. Many PAGs used in DUV (248 nm) resists are inefficient when formulated with (non-phenolic) polymers used in 193-nm resists, presumably due to the lack of electron transfer sensitization. In this paper, we document the negative consequences of triflic acid on 193- nm resist performance, including data on acid volatility and the impact of apparent diffusion. Acid generators which combine high reactivity, low photoacid volatility, and improved resolution are described.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert D. Allen, Robert D. Allen, Juliann Opitz, Juliann Opitz, Carl E. Larson, Carl E. Larson, Richard A. Di Pietro, Richard A. Di Pietro, Gregory Breyta, Gregory Breyta, Donald C. Hofer, Donald C. Hofer, } "Role of photoacid structure on the performance of 193-nm resists", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275811; https://doi.org/10.1117/12.275811
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