7 July 1997 Terpolymer of maleic anhydride and cycloolefin derivatives as an ArF photoresist
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A number of single layer ArF resist systems based on acrylic polymer have been reported. However, the resist systems generally have poor dry etch durability and unusual developing condition. To overcome these problems, in this work, we have developed a novel alkaline soluble polymer through deprotection. The polymer was prepared by free radical polymerization of maleic anhydride, norbornene, and t-butyl 3- bicyclo-(2,2,1)-hept-5-en-2-yl 3-hydroxypropionate. Since our polymer system contains large amount of alicyclic carbon and hydroxy group in the polymer chain, the system shows good adhesion, thermal stability, and high transmittance at 193 nm. The resist based on the polymer shows positive tone image of 0.17 micrometer L/S in the presence of photoacid generators such as onium salts. We describe this resist system together with the synthese of monomer and polymer, their characterizations and some of results of lithographic performance.
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Seong-Ju Kim, Seong-Ju Kim, Joo Hyeon Park, Joo Hyeon Park, Ji-Hong Kim, Ji-Hong Kim, Ki-Dae Kim, Ki-Dae Kim, Hosull Lee, Hosull Lee, Jae Chang Jung, Jae Chang Jung, Cheol-Kyu Bok, Cheol-Kyu Bok, Ki-Ho Baik, Ki-Ho Baik, } "Terpolymer of maleic anhydride and cycloolefin derivatives as an ArF photoresist", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275898; https://doi.org/10.1117/12.275898

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