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7 July 1997 Wafer-cleaning process after plasma metal etch
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The developments associated with a new plasma etching technique for sub micron process using DUV resist has placed a new requirement on wafer cleaning technology. Not only does it require a chemical solution to remove the etching residue, it is desirable to reduce residual chlorine. In our study, a metal stack, including TiN ARC 400 angstroms/AlCu 6500 angstrom/ barrier TiN 600 angstrom, is patterned with DUV resist and etched in a single wafer etcher. The chlorine level on the wafer surface is determined using WDXRF analysis. We have made morphological observations of the wafer cleanliness using field emission scanning electron microscopy.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Didier Louis, Wai-Mun Lee, and Douglas Holmes "Wafer-cleaning process after plasma metal etch", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997);

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