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Application of statistical metrology to reduce total uncertainty in the CD-SEM measurement of across-chip linewidth variation
Characterization of real particle size for the process particle monitor using laser surface scanners
Application of rigorous topography simulation for modeling of defect propagation/growth in VLSI fabrication
Characterizing overlay registration of concentric 5X and 1X stepper exposure fields using interfield data
Improved defect detection performance at metal and contact etch levels using a new optical-comparison segmented-autothreshold technology
Monitoring optical properties and thickness of PECVD SiON antireflective layer by spectroscopic ellipsometry
Precise measurement of ARC optical indices in the deep-UV range by variable-angle spectroscopic ellipsometry