Dimensional metrology at the nanometer level: combined SEM and PPM

Michael T. Postek Jr.; Huddee J. Ho; Harrison L. Weese

doi:10.1117/12.275914

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7 July 1997 Dimensional metrology at the nanometer level: combined SEM and PPM

Michael T. Postek Jr., Huddee J. Ho, Harrison L. Weese

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Proceedings Volume 3050, Metrology, Inspection, and Process Control for Microlithography XI; (1997) https://doi.org/10.1117/12.275914
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

The National Institute of Standards and Technology (NIST) is currently exploring the potential afforded by the incorporation of a commercial proximal probe microscope operating in the scanning tunneling or atomic force mode into a high resolution field emission scanning electron microscope (SEM). This instrument will be used in the development of NIST traceable standards for dimensional metrology at the nanometer level. The combination of the tow microscopic techniques provides: high precision probe placement, the capability of measuring and monitoring the probe geometry, monitoring the scanning of the probe across the feature of interest and an ability for comparative microscopy. The integration of the commercial instrument is the first step in the development of a custom NIST integrated SEM/SxM metrology instrument. This paper presents early results regarding the integration of the two instruments and the application of these instruments to the development of SRM 2090 and the SEM sharpness standard.

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Michael T. Postek Jr., Huddee J. Ho, and Harrison L. Weese "Dimensional metrology at the nanometer level: combined SEM and PPM", Proc. SPIE 3050, Metrology, Inspection, and Process Control for Microlithography XI, (7 July 1997); https://doi.org/10.1117/12.275914

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