7 July 1997 Innovations in monitoring for sub-half-micron production
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As wafer substrates increase to 200 mm and critical dimensions decrease below half micron, defect density control becomes more critical. Defects must be monitored and minimized in a timely manner in order to maintain profitability. In addition, as the number of masking layers increases, so do the cycles through the photolithography cells that also highlights the need for improved imaging quality. The best case scenario would be to monitor imaging integrity prior to committing production wafers. One of the greatest stimulators for innovation can be information. Such was the case for us, when we received a new KLA 2132 that allowed us to inspect a higher percentage of the patterend surface within a wafer. The innovation discussed in this paper is the process of combining several individual non-production monitors into one comprehensive test monitor. This one new monitor inspected by KLA has provided better information on photo cell integrity then previously available. This non-production monitor allows us to guarantee the quality of the photo imaging cell prior to committing production materials. The use of this new comprehensive test monitor has enabled us to improve imaging quality and reduce rework rates without a significant impact to production uptime.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Teresa L. Lauck, Teresa L. Lauck, Kristin Wiley, Kristin Wiley, "Innovations in monitoring for sub-half-micron production", Proc. SPIE 3050, Metrology, Inspection, and Process Control for Microlithography XI, (7 July 1997); doi: 10.1117/12.275957; https://doi.org/10.1117/12.275957


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