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7 July 1997 ArF excimer laser lithography using monochromatic projection lens coupled with narrowed-bandwidth laser
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Abstract
We have developed an ArF excimer laser exposure system that combines a monochromatic quartz projection lens system and a spectrally-narrowed ArF excimer laser. The bandwidth of the laser was narrowed to 0.7 pm by using three prisms and an etalon. We fabricated 0.12 micrometers lines-and-spaces using an alternating phase shifting mask and a top surface imaging resist.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun-ichi Yano, Shinji Ito, Hitoshi Sekita, Akifumi Tada, and Yukio Ogura "ArF excimer laser lithography using monochromatic projection lens coupled with narrowed-bandwidth laser", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.276011; https://doi.org/10.1117/12.276011
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