Characteristics of Ge-based ARL for DUV lithography

Yongbeom Kim; Dong-Wan Kim; Hoyoung Kang; Joo-Tae Moon; Moon-Yong Lee

doi:10.1117/12.276042

7 July 1997 Characteristics of Ge-based ARL for DUV lithography

Yongbeom Kim, Dong-Wan Kim, Hoyoung Kang, Joo-Tae Moon, Moon-Yong Lee

Proceedings Volume 3051, Optical Microlithography X; (1997) https://doi.org/10.1117/12.276042
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

Germanium based ARL (Anti Reflective Layer) having high conformality over topography and removable during resist strip process was developed. Its various characteristics were investigated. The ARLs were composed with GeN, and (Ge,Si)N_x and fabricated by reactive RF sputtering. The optical constants of Ge based materials were measured and the ARL performance for DUV lithography was obtained. Since the GEN_x is dissolved in water during resist develop process, it can not be used. Therefore, silicon was added to solve this problem. Thin film characteristics of (Ge,Si)N_x compound were analyzed using XRD, XPS, AES, SEM. The ARL performance was confirmed by resist patterning. Because the (Ge,Si)N_x material is removable by H₂SO₄ strip, yet most of current inorganic ARL is not, it has advantages for process simplicity.

Citation Download Citation

Yongbeom Kim, Dong-Wan Kim, Hoyoung Kang, Joo-Tae Moon, and Moon-Yong Lee "Characteristics of Ge-based ARL for DUV lithography", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); https://doi.org/10.1117/12.276042

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