7 July 1997 Edge-phase-shifting lithography for sub-0.3-μm T-gates
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Abstract
We have developed an edge-phase-shifting (EPS) lithography for the fabrication of sub 0.3 micrometers T-gates using a 5X i-line stepper with a 0.4 numerical aperture lens. Two exposures have to be accurately aligned on each other within 150 nm. The first exposure uses EPS lithography and defines the gate length in a negative resist. The second exposure defines the cross-section of the T-gate. Using this lithography, hetero structure field effect transistors can be fabricated.
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Axel Huelsmann, Axel Huelsmann, Fred Becker, Fred Becker, Jochen Hornung, Jochen Hornung, Dagmar Koehler, Dagmar Koehler, Joachim Schneider, Joachim Schneider, } "Edge-phase-shifting lithography for sub-0.3-μm T-gates", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.276025; https://doi.org/10.1117/12.276025
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