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7 July 1997 Experimental study on nonlinear multiple-exposure method
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Non-linear multiple exposure (NOLMEX) method for forming a fine line and space pattern is described. The combination of the resist with non-linear photosensitivity and multiple exposures allows us to exceed the optical cut-off frequency, which has never been realized in the field of photolithography. In this paper, a new approach for NOLMEX method utilizing an ordinary resist instead of the non- linear resist is introduced. In the experimental results, 0.19 micrometers L/S pattern was resolved with a commercial i-line stepper using ordinary illumination, which indicates the potential of NOLMEX method.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Ooki, Derek P. Coon, Soichi Owa, Toshihiko Sei, and Kazuya Okamoto "Experimental study on nonlinear multiple-exposure method", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.276012;

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