7 July 1997 Experimental study on nonlinear multiple-exposure method
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Abstract
Non-linear multiple exposure (NOLMEX) method for forming a fine line and space pattern is described. The combination of the resist with non-linear photosensitivity and multiple exposures allows us to exceed the optical cut-off frequency, which has never been realized in the field of photolithography. In this paper, a new approach for NOLMEX method utilizing an ordinary resist instead of the non- linear resist is introduced. In the experimental results, 0.19 micrometers L/S pattern was resolved with a commercial i-line stepper using ordinary illumination, which indicates the potential of NOLMEX method.
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Hiroshi Ooki, Hiroshi Ooki, Derek P. Coon, Derek P. Coon, Soichi Owa, Soichi Owa, Toshihiko Sei, Toshihiko Sei, Kazuya Okamoto, Kazuya Okamoto, } "Experimental study on nonlinear multiple-exposure method", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.276012; https://doi.org/10.1117/12.276012
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