7 July 1997 Methodology for utilizing CD distributions for optimization of lithographic processes
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Abstract
As the critical dimension (CD) of optical lithography processes continues to decrease, the process latitude also decreases and CD control becomes more difficult. As this trend continues, lithography engineers will find that they require improved process optimization methods which take into account the random and systematic errors that are inherent in any manufacturing process. This paper shows the methodology of such an optimization method. Lithography simulation and analysis software, combined with experimental process error distributions, are used to perform optimizations of numerical aperture and partial coherence, as well as the selection of the best OPC pattern for a given mask.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Edward W. Charrier, Edward W. Charrier, Chris A. Mack, Chris A. Mack, Qiang Zuo, Qiang Zuo, Mark John Maslow, Mark John Maslow, } "Methodology for utilizing CD distributions for optimization of lithographic processes", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.276033; https://doi.org/10.1117/12.276033
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