7 July 1997 Optical proximity correction of alternating phase-shift masks for 0.18-um KrF lithography
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Abstract
Optical proximity correction (OPC) was applied to alternating phase shift masks to improve printed resist pattern fidelity. Mask patterns were modified with jog type corrections. DRAM cell patterns were exposed by using a 0.55 NA, 0.36/0.55 (sigma) , KrF excimer laser stepper onto 0.5 micrometers thick chemically amplified negative resist. With 0.55 (sigma) , OPC was effective and printed resist pattern was very close to designed one. However, with 0.36 (sigma) , large pattern deformation was observed due to coma aberration.
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Tadao Yasuzato, Shinji Ishida, Satomi Shioiri, Hiroyoshi Tanabe, Kunihiko Kasama, "Optical proximity correction of alternating phase-shift masks for 0.18-um KrF lithography", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.275992; https://doi.org/10.1117/12.275992
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