7 July 1997 Performance of small-field 193-nm exposure system
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Abstract
A small field ArF excimer laser based exposure tool has been designed and fabricated for the 193 nm lithography process research and exposure tool development. The projection optics based upon Schwartzchild concept has a specification of 3 mm field diameter, X5 reduction ratio, and 0.5 NA. The exposure tool uses an unnarrowed ArF excimer laser as a light source, and uses a fly's eye homogenizer to produce a reticle illumination uniformity of < +/- 5% RMS/pulse. The results of preliminary exposure with PMMA resist coincided with simulation and expectation, and advanced imaging tests carrying out for various resists. In this paper, we report the detailed system parameters and characterization data of the small field ArF excimer laser exposure tool and some of advances in 193 nm lithography that have been achieved with the system.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dohoon Kim, Dohoon Kim, Kag Hyeon Lee, Kag Hyeon Lee, Jong-Soo Kim, Jong-Soo Kim, Sang-Soo Choi, Sang-Soo Choi, Hye-Keun Oh, Hye-Keun Oh, Hai Bin Chung, Hai Bin Chung, Hyung Joun Yoo, Hyung Joun Yoo, } "Performance of small-field 193-nm exposure system", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.276048; https://doi.org/10.1117/12.276048
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