Planarizing BARC 0.32-um i-line lithography process for the reduction of intradie CD variation

Jeffrey R. Johnson; Audrey M. Davis; Andrew E. Bair; Peter D. Nunan; Charles R. Spinner III; Mark A. Spak; Ralph R. Dammel

doi:10.1117/12.276019

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7 July 1997 Planarizing BARC 0.32-μm i-line lithography process for the reduction of intradie CD variation

Jeffrey R. Johnson, Audrey M. Davis, Andrew E. Bair, Peter D. Nunan, Charles R. Spinner III, Mark A. Spak, Ralph R. Dammel

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Proceedings Volume 3051, Optical Microlithography X; (1997) https://doi.org/10.1117/12.276019
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

The effects of increasing bottom-side anti-reflective coating (BARC) thickness on the CD distribution within a device are presented. In conjunction with the increasing BARC thickness, reductions in the photoresist thickness are shown to be beneficial. Significant reductions in CD variability and increases in the depth of focus versus CD spread are achieved with increased BARC and reduced photoresist thickness. Although significant improvements are seen with a thicker BARC film for the photolithography process, the importance of optimizing the etch process for the thicker films is shown. The effects of CD distribution on important electrical device parameters are also presented.

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Jeffrey R. Johnson, Audrey M. Davis, Andrew E. Bair, Peter D. Nunan, Charles R. Spinner III, Mark A. Spak, and Ralph R. Dammel "Planarizing BARC 0.32-μm i-line lithography process for the reduction of intradie CD variation", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); https://doi.org/10.1117/12.276019

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