7 July 1997 Simulation and optimization of phase-shift masks for dense contact patterns with i-line illumination
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Abstract
Several phase shift mask designs such as subresolution type, subresolution alternating type, outrigger type, and rim type for contact hole patterning were theoretically and experimentally evaluated in terms of their lithography performance. The various designed layouts which have the phase regions of manifold dimensions were simulated with lower coherent factor ((sigma) equals 0.3) and higher coherent factor ((sigma) equals 0.62). The detailed evaluation was made in terms of the log slope of the log image at nominal feature edge and side lobe effect of the intensity profile.
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Chuen-Huei Yang, Chang-Ming Dai, "Simulation and optimization of phase-shift masks for dense contact patterns with i-line illumination", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.276023; https://doi.org/10.1117/12.276023
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