7 July 1997 Spatial-filter models to describe IC lithographic behavior
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Proceedings Volume 3051, Optical Microlithography X; (1997); doi: 10.1117/12.275978
Event: Microlithography '97, 1997, Santa Clara, CA, United States
Abstract
Proximity correction systems require an accurate, fast way to predict how a pattern configuration will transfer to the wafer. In this paper we present an efficient method for modeling the pattern transfer process based on Dennis Gabor's `theory of communication'. This method is based on a `convolution form' where any 2D transfer process can be modeled with a set of linear, 2D spatial filters, even when the transfer process is non-linear. We will show that this form is a general case from which other well-known process simulation models can be derived. Furthermore, we will demonstrate that the convolution form can be used to model observed phenomena, even when the physical mechanisms involved are unknown.
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John P. Stirniman, Michael L. Rieger, "Spatial-filter models to describe IC lithographic behavior", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.275978; https://doi.org/10.1117/12.275978
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KEYWORDS
Process modeling

Lithography

Convolution

Communication theory

Semiconducting wafers

Spatial filters

Systems modeling

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