7 July 1997 Subpicometer ArF excimer laser for 193-nm lithography
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Abstract
Highly narrowed Argon Fluoride excimer laser for practical refractive exposure system with high NA and wide field size lenses is developed. The laser realizes 0.6 W at 400 Hz. The spectral bandwidth is less than 0.75 pm, the stability of central wavelength is within +/- 0.25 pm and the concentration of energy within 3- pm band is more than 95%. The gas lifetime is more than 1 X 107 pulses without gas purifier. By the one gas life performance test and the short term performance test, we confirm this laser is useful for the development of microlithography process.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Akita, Hiroshi Komori, Noriaki Kouda, Shunsuke Yoshioka, Yasuo Itakura, Hakaru Mizoguchi, "Subpicometer ArF excimer laser for 193-nm lithography", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.276010; https://doi.org/10.1117/12.276010
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