7 July 1997 Subpicometer ArF excimer laser for 193-nm lithography
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Abstract
Highly narrowed Argon Fluoride excimer laser for practical refractive exposure system with high NA and wide field size lenses is developed. The laser realizes 0.6 W at 400 Hz. The spectral bandwidth is less than 0.75 pm, the stability of central wavelength is within +/- 0.25 pm and the concentration of energy within 3- pm band is more than 95%. The gas lifetime is more than 1 X 107 pulses without gas purifier. By the one gas life performance test and the short term performance test, we confirm this laser is useful for the development of microlithography process.
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Jun Akita, Jun Akita, Hiroshi Komori, Hiroshi Komori, Noriaki Kouda, Noriaki Kouda, Shunsuke Yoshioka, Shunsuke Yoshioka, Yasuo Itakura, Yasuo Itakura, Hakaru Mizoguchi, Hakaru Mizoguchi, } "Subpicometer ArF excimer laser for 193-nm lithography", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.276010; https://doi.org/10.1117/12.276010
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