27 December 1996 Influence of process parameters on the growth of YBCO thin films deposited by excimer laser ablation
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Proceedings Volume 3052, Ninth International School on Quantum Electronics: Lasers--Physics and Applications; (1996) https://doi.org/10.1117/12.262955
Event: Ninth International School on Quantum Electronics: Lasers: Physics and Applications, 1996, Varna, Bulgaria
Abstract
The aim of this work was to investigate the growth mechanism of Y1Ba2Cu3O7-(delta ) thin films prepared by KrF and XeCl excimer laser ablation on different substrate. To investigate the film's properties - morphology, epitaxy, c-axis length and critical temperature (Tc) - we varied the process parameters - oxygen partial pressure, substrate temperature and laser energy density. The films were analyzed by (Theta) -2(Theta) XRD, (phi) -scan XRD, optical microscopy, AFM, prophilometry and electric measurements.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. A. Chakalov, Zdravko G. Ivanov, P. Larsson, Rumen I. Tomov, "Influence of process parameters on the growth of YBCO thin films deposited by excimer laser ablation", Proc. SPIE 3052, Ninth International School on Quantum Electronics: Lasers--Physics and Applications, (27 December 1996); doi: 10.1117/12.262955; https://doi.org/10.1117/12.262955
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