27 December 1996 Preparation of LiNbO3 thin films by XeCl excimer laser ablation
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Proceedings Volume 3052, Ninth International School on Quantum Electronics: Lasers--Physics and Applications; (1996) https://doi.org/10.1117/12.262954
Event: Ninth International School on Quantum Electronics: Lasers: Physics and Applications, 1996, Varna, Bulgaria
Abstract
Laser pulsed deposition technique was utilized for preparation of LiNbO3 thin films on sapphire and GaAs substrates. XeCl excimer laser was used for the ablation of monocrystalline LiNbO3 target. The deposition was performed in oxygen atmosphere at different substrate temperatures. The ablation threshold was determined from the experimental results presented ablation rate vs. on laser fluence dependence. The films were characterized by XRD, SEM and ellipsometry.
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Peter A. Atanasov, Rumen I. Tomov, Totka D. Kabadjova, Dmitre G. Ouzounov, V. Tzanev, "Preparation of LiNbO3 thin films by XeCl excimer laser ablation", Proc. SPIE 3052, Ninth International School on Quantum Electronics: Lasers--Physics and Applications, (27 December 1996); doi: 10.1117/12.262954; https://doi.org/10.1117/12.262954
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