13 February 1997 Optimization of properties of ion-sensitive amorphous silicon (a-Si:H) based transistors
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Proceedings Volume 3054, Optoelectronic and Electronic Sensors II; (1997) https://doi.org/10.1117/12.266708
Event: Optoelectronic and Electronic Sensors II, 1996, Szczyrk, Poland
Abstract
In this work the application of a-Si:H thin film transistor technology in the field of chemical sensors is presented. In particularly, the optimization of magnetron deposition process for obtaining various silicon nitride films and TFT structures are described as well as adequate structures of Ion Sensitive Field Effect Transistor with respect to the ion sensitive hydrogen properties are studied. The device shows a good Nernst response and high reproducibility but not acceptable stability yet.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Kolodziej, Stanislaw Nowak, Wladislaw Torbicz, Dorota Pijanowska, P. Krewniak, "Optimization of properties of ion-sensitive amorphous silicon (a-Si:H) based transistors", Proc. SPIE 3054, Optoelectronic and Electronic Sensors II, (13 February 1997); doi: 10.1117/12.266708; https://doi.org/10.1117/12.266708
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