13 February 1997 Preparation and application in gas detection of rutile oxide semiconductors
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Proceedings Volume 3054, Optoelectronic and Electronic Sensors II; (1997) https://doi.org/10.1117/12.266705
Event: Optoelectronic and Electronic Sensors II, 1996, Szczyrk, Poland
Abstract
TiO2-SnO2 polycrystalline ceramics were prepared by precipitation from SnCl4 and impregnation of TiO2 powder. Thin films were produced by rf reactive sputtering from Ti-Sn metallic target in the Ar+15%O2 reactive gas mixture. The influence of the system composition on gas sensing performance was investigated. The electrical resistance was measured as a function of hydrogen and methane activity in air at different temperatures between 600 K and 1200 K.
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Katarzyna Zakrzewska, Katarzyna Zakrzewska, Marta Radecka, Marta Radecka, Pawel Sobas, Pawel Sobas, } "Preparation and application in gas detection of rutile oxide semiconductors", Proc. SPIE 3054, Optoelectronic and Electronic Sensors II, (13 February 1997); doi: 10.1117/12.266705; https://doi.org/10.1117/12.266705
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