13 February 1997 Preparation and application in gas detection of rutile oxide semiconductors
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Proceedings Volume 3054, Optoelectronic and Electronic Sensors II; (1997) https://doi.org/10.1117/12.266705
Event: Optoelectronic and Electronic Sensors II, 1996, Szczyrk, Poland
Abstract
TiO2-SnO2 polycrystalline ceramics were prepared by precipitation from SnCl4 and impregnation of TiO2 powder. Thin films were produced by rf reactive sputtering from Ti-Sn metallic target in the Ar+15%O2 reactive gas mixture. The influence of the system composition on gas sensing performance was investigated. The electrical resistance was measured as a function of hydrogen and methane activity in air at different temperatures between 600 K and 1200 K.
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Katarzyna Zakrzewska, Katarzyna Zakrzewska, Marta Radecka, Marta Radecka, Pawel Sobas, Pawel Sobas, "Preparation and application in gas detection of rutile oxide semiconductors", Proc. SPIE 3054, Optoelectronic and Electronic Sensors II, (13 February 1997); doi: 10.1117/12.266705; https://doi.org/10.1117/12.266705
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